Tektronix TIVP1, TIVP05, TIVP02 IsoVu Isolated Probes

IsoVu probe technology delivers accurate differential measurements up to ±2500 V on reference voltages slewing ±60 kV at 100 V/ns or faster. With the IsoVu Generation 2 design, you get all the benefits of IsoVu technology at 1/5 of the size of first generation probes. With versatile MMCX connectors and an unmatched combination of bandwidth, dynamic range, and common mode rejection, IsoVu Gen 2 probes are setting new standards for isolated probe technology and enabling wide bandgap power designs using SiC and GaN.

Model	Bandwidth	Differential Voltage	Common Mode Voltage	Common Mode Rejection Ratio	Fiber Cable Length
TIVP1L	1 GHz	±2500 V	±60 kV	DC: 160dB 100 MHz: 100 dB 200 MHz: 100 dB	10 meters
TIVP05	500 MHz	±2500 V	±60 kV	DC: 160dB 100 MHz: 100 dB 200 MHz: 100 dB	2 meters
TIVP02	200 MHz	±2500 V	±60 kV	DC: 160dB 100 MHz: 100 dB 200 MHz: 100 dB	2 meters
TIVP05L	500 MHz	±2500 V	±60 kV	DC: 160dB 100 MHz: 100 dB 200 MHz: 100 dB	10 meters
TIVP02L	200 MHz	±2500 V	±60 kV	DC: 160dB 100 MHz: 100 dB 200 MHz: 100 dB	10 meters
TIVP1	1 GHz	±2500 V	±60 kV	DC: 160dB 100 MHz: 100 dB 200 MHz: 100 dB	2 meters

Benefits of IsoVu Probes

IsoVu technology uses power-over-fiber and an optical analog signal path for complete galvanic isolation between the measurement system and your DUT. By allowing the probe to float independently at the common mode voltage, isolation provides important advantages.

160 dB (100 million to 1) CMRR at DC
Up to 120 dB (1 million to 1) CMRR at 100 MHz
Up to 80 dB (10,000 to 1) CMRR at 1 GHz
±60 kV Common Mode Voltage range
Up to ±2500 V differential input Voltage range
Up to ±2500 V offset range

High Voltage and high Bandwidth

With traditional differential probes you had to choose between high bandwidth or high voltage levels. IsoVu probes, with their shielded coaxial cable and isolation, provide high bandwidth and a differential voltage range of ±2500 V. IsoVu Gen 2 offers bandwidths of 200 MHz, 500 MHz, and 1 GHz to fit your budget and performance needs.

Applications

Half/Full bridge designs using SiC or GaN, FETs, or IGBTs
Floating measurements
Power converter design
Power device evaluation
Switching power supply design
Inverter design
Motor drive design
Electronic ballast design
EMI and ESD troubleshooting
Current shunt measurements

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