Today’s ULSI MOSFET devices feature extremely short channel lengths and high electric fields. As gate lengths shrink, hot carrier induced degradation has become a critical reliability concern. In the hot carrier effect, carriers accelerate and become trapped in the gate oxide. These trapped charges cause time dependent shifts in measured device parameters, such as the threshold voltage (VTH), transconductance (GM), and linear (IDLIN) and saturation (IDSAT) drain current.

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