Silicon carbide (SiC) MOSFETs often exhibit a hysteresis effect, primarily due to traps and results in a shift in the threshold voltage (Vth). This threshold voltage difference can affect some device parameters such as the leakage current and onstate resistance. To address the hysteresis effect, JEDEC (Joint Electron Device Engineering Council) introduced the JEP183A standard, which provides guidelines for measuring the threshold voltage of SiC MOSFET devices.
The 4200A-SCS Parameter Analyzer, paired with the Clarius+ Software Suite and two SMUs, enables accurate threshold voltage measurements using test methods based on the JEDEC JEP183A standard. Download our latest app note to discover how you can streamline SiC device characterization today!