As demand for higher-density, lower-cost non-volatile memory (NVM) continues to grow, traditional floating gate technology is approaching its scaling limits. This has accelerated the exploration of alternative memory technologies, driving the need for more advanced and flexible electrical characterization methods.

To support this evolving landscape, engineers require test systems with wide dynamic range, precise timing, and flexible parameter control.

In this application note, you will learn:

• The evolution of non-volatile memory technologies 
• Key electrical test parameters for floating gate flash, phase-change memory (PCM/PRAM), ferro-electric memory (FeRAM), and resistive memory (ReRAM)
• Emerging test challenges and requirements in characterizing NVM materials and devices 
• How the 4225-PMU with 4225-RPM enables simultaneous current and voltage measurement for accurate transient pulse I-V characterization

Explore how the 4225-PMU/4225-RPM combination simplifies characterization of next-generation NVM devices in our application note.