Key Features
  • Source or sink:
    •  2,000 W of pulsed power (±40 V, ±50 A)
    •  200 W of DC power (±10 V @ ±20A, ±20 V @ ±10 A, ±40 V @ ±5 A)
  • Easily connect two units (in series or parallel) to create solutions up to ±100 A or ±80 V
  • 1 pA resolution enables precise measurement of very low leakage currents
  • 1 μs per point (1 MHz), 18-bit sampling, accurately characterizes transient behavior
  • 1% to 100% pulse duty cycle for pulse width modulated (PWM) drive schemes and device- specific drive stimulus
  • Combines a precision power supply, current source, DMM, arbitrary waveform generator, V or I pulse generator with measurement, electronic load, and trigger controller—all in one instrument

 

Typical Applications
  • Power semiconductor, HBLED, and optical device characterization and testing
  • Solar cell characterization and testing
  • Characterization of GaN, SiC, and other compound materials and devices
  • Semiconductor junction temperature characterization
  • High speed, high precision digitization
  • Electromigration studies
  • High current, high power device testing

 

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