Measuring dynamic RDS(on) is critical for accurately characterizing power devices like MOSFETs and GaN FETs, directly impacting design efficiency and reliability. Traditional methods often rely on complex clamping circuits, which can introduce their own challenges and limitations. We understand these frustrations.

Our latest Application Note introduces a groundbreaking software-based approach to accurately measure dynamic RDS(on) without the need for a clamping circuit.

Discover how this innovative technique can simplify your test setups, reduce measurement errors, and accelerate your design cycles. Gain insights into optimizing your power device characterization with a method that’s both efficient and precise.